Abstract: Phase Change memory (PCM) is a leading candidate for next-generation non-volatile memory. However, its adoption in automotive electronics has been constrained by the lack of PCM materials capable of sustaining long term data retention at elevated temperatures. This seminar presents the successful optimization of the phase change material In3Sb1Te2 (IST), which exhibits robust high temperature data retention, thereby providing a strong foundation for automotive-grade PCM. Although IST frequently suffers from phase segregation under typical sputtering conditions, in this study we successfully achieve stoichiometric, single phase IST thin films, a key requirement for reliable automotive-grade PCM. These optimized films exhibit excellent structural and electrical stability under prolonged thermal stress, maintain a large resistivity contrast at 150 °C, and demonstrate a projected 10-year data retention capability at this temperature, meeting the stringent material level criteria for AEC-Q100 Grade 0 qualification. Complementary device level evaluations further confirm that IST-based PCM satisfies the performance requirements necessary for operation in demanding automotive environments.

High switching speed is another critical challenge for automotive-grade PCM, as programming performance is primarily determined by the SET operation. To determine whether SET speed is intrinsic to the material or can be engineered through interfaces and device design, we systematically investigate multiple device structures. Our results show that the metal-PCM interface plays a decisive role in switching speed, programming power, and operational stability. Interface-engineered devices achieve ultrafast SET switching with DRAM-class speeds of approximately 5 ns, together with reduced programming power, key advantages for high temperature, energy-constrained automotive systems. Finally, we examine the influence of device architecture on SET dynamics. Comparative analyses of Pore and metal-insulator-metal (MIM) structures reveal distinct differences in their overvoltage–delay-time characteristics. These differences directly influence their threshold switching behaviour (the process governing the SET state speed), providing critical insights for optimizing PCM device performance. Overall, this seminar integrates material level advancements with device level validation, demonstrating that optimized IST enables reliable, high temperature PCM suitable for future automotive non-volatile memory applications.

Event Details
Title: Exploring In3Sb1Te2-based Phase Change Memory for Automotive-grade Embedded Non-volatile Memory Applications (PhD viva voce)
Date: June 29, 2026 at 04:00 PM
Venue: Google Meet (https://meet.google.com/zuk-ytap-rzv)
Speaker: Mr. Salman Khan (EE19D206)
Guide: Dr. Anbarasu Manivannan
Type: PHD seminar

Updated: