Research Interests

  • Development of high speed non-volatile Phase Change Memory.
  • Ovonic selector devices for vertically stackable cross-point arrays.
  • Novel vertically stackable high density Phase Change Memory.
  • Phase change materials for Photonic applications.
  • Phase change logic device.
  • Phase change synaptic device.
  • Universal Memory concepts.

Awards and Honours

  • Young Scientist Research Award (2013) by Advanced Technology committee, Board of Research in Nuclear Sciences, DAE, Government of India.
  • Alexander von Humboldt Post Doctoral Fellowship by AvH foundation, Germany, to carryout research work during 01-07-2009->31-08-2011 at Institute of Physics (I-A), RWTH Aachen Technological University, Germany.
  • Dr Srinivasa Rao Krishnamurthy Medal for the Best Ph D, Thesis (2007-2008) at the Indian Institute of Science, Bangalore.
  • Best paper award in the Emerging Technology area, ET conference, June 2007, Applied materials Inc, California, USA.
  • Best paper award, in the Conference of Research Scholars on Materials Science and Engineering (CRSMSE) August 2003 at IIT Kharagpur.

Personal Website

For more information, visit my personal website.

Recent Publications

Journals

  • N Saxena, R Raghunathan and M Anbarasu, A scheme for enabling the ultimate speed of threshold switching in phase change memory devices, Scientific Reports 11, 6111 (2021).
  • Y E B Vidhya, P Arvind, M Anbarasu, N J Vasa, “Influence of fluence, beam overlap and aging on the wettability of pulsed Nd3+:YAG nanosecond laser-textured Cu and Al sheets”, Applied Surface Science, 548 149259 (2021).
  • S Rathinavelu; N Saxena, K D Shukla and M Anbarasu, “Rapid threshold switching dynamics of co-sputtered chalcogenide Ge15Te85 device for selector application” Semicond Sci Technol 36 015013 (2021).
  • S K Pandey and M Anbarasu, “Direct evidence for structural transformation and higher thermal stability of amorphous InSbTe phase change material”, Scripta Materialia 192, 73 (2021).
  • M S Arjunan, D Suresh, Anirban Mondal, K V Adarsh, and M Anbarasu, “Realization of 4-bit Multilevel Optical Switching in Ge2Sb2Te5 and Ag5In5Sb60Te30 Phase Change Materials Enabled in the Visible Region”, ACS Applied Electronic Materials 2, 3977 (2020).

Conference Proceedings

  • D Suresh, D Jayakumar, R Srinivasan and M Anbarasu, Understanding the impact of Heavy-Ion Induced Single Event Upsets in Phase Change Memory, European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, p155 (2018).
  • N Saxena, C Chen, M Wuttig, M Anbarasu, Electrical conductivity and threshold switching dynamics of GeSbTe phase change memory devices, European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, p137 (2017).
  • N Saxena, C Chen, M Wuttig, M Anbarasu,Ultrafast threshold switching dynamics of Ge2Sb2Te5 phase change memory device, Proc of 17th Non-volatile Memory Tech Sym NVMTS p133 (2017).
  • S K Pandey and M Anbarasu, Investigation on In3SbTe2 phase change material for multi-bit data storage applications European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, p132 (2016).
  • Smriti Sahu, Uday Deshpande, Vasant Sathe, M Anbarasu, A Low Temperature Study on Optical Bandgap and Vibrational Modes of Thin Ge1Sb4Te7 Films, European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, p149 (2015).
  • M Anbarasu, Smriti Sahu, M Santosh Kumar, Kumaraswamy Miriyala and R Ranjith, An Extremely Low Power Threshold Switching of Thin Ge15Te85 Films using Conductive Atomic Force Microscopy (C-AFM) European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, p105 (2014).
  • Gaurav Bishnoi, K Harish Kumar, Krishna Dayal Shukla, M Anbarasu, LabVIEW controlled ultrafast programmable electrical tester for nanoscale device characterization Proceedings of 2nd International conference on intelligent robotics, automation and manufacturing (IRAM) Emerald Group Publishing Limited, p241-248, (2013).
  • M Anbarasu, Pascal Rausch, Peter Zalden, Hanno Volker, J Y Raty, R Mazzarello and Matthias Wuttig, Local structure and physical properties of In3SbTe2: Characterizing a member of a fourth family of phase change materials European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, p212, (2011).
  • M Anbarasu and S Asokan, Investigations on Ge-Te-Si glasses and their suitability for phase change memory applications, European Phase change and Ovonics Science Symposium (EPCOS) Proceedings, E01, (2009).
  • S Asokan, S D Savransky, Pulok Pattanayak and M Anbarasu, Functionally Expanded Phase-Change Memory: Experiments on Light Influence on Threshold Voltage IEEE Non-Volatile Memory Technology Symposium, ISBN: 0-7803-9408-9, 69 (7-10 Nov 2005).

Patents

  • M Anbarasu, K D Shukla, N Saxena, Ultrafast Programmable Electrical Test System, Indian Patent, No 201721016295 (2017).
  • I A Palani, A K Shukla, K Akash, M Anbarasu, V Singh, A dual axis continuous solar tracking system using shape memory alloy bimorph based solar panel, Indian Patent, 201721026063 (2017).
  • Kaushal K Singh, Nety M Krishna, Om Nalamasu, S Asokan, M Anbarasu, A K Sood, Sudakshina Prusty, Ge-Te-Si glasses for Phase Change Random Access Memory (PCRAM) applications PCT filed (2008).

Book Authoerd

  • M Anbarasu and S Asokan; Title: The Effects of Rigidity Percolation and Manifestation of Intermediate Phase in Chalcogenide Glasses Revealed by Electrical Switching Studies Title of book: Rigidity Transitions and Boolchand Intermediate Phases in Nano- materials Series: Optoelectronic materials and devices, volume 6 INOE 2009 Editors: M Micoulaut and M Popescu.

Professional Experience

  • Professor, Department of Electrical Engineering, IIT Madras (July 2021 - till date).
  • Associate Professor, Department of Electrical Engineering, IIT Madras (Dec 2018 - July 2021).
  • Associate Professor, Discipline of Electrical Engineering, IIT Indore (June 2016 - Dec 2018).
  • Assistant Professor, Discipline of Electrical Engineering, IIT Indore (March 2012 - June 2016).
  • Post-Doctoral Fellow, Institute of Physics (I-A), RWTH Aachen University, Germany (Sep 2011 - Feb 2012).
  • Alexander von Humboldt Post-Doctoral Fellow, Institute of Physics (I-A), RWTH Aachen University, Germany (Host: Prof Dr Matthias Wuttig) (Sep 2009 - Aug 2011).
  • Post-Doctoral Fellow, Physics Dept, Heriot-Watt University, Edinburgh, UK (UKIERI Project jointly with IISc) (Oct - Nov 2008).
  • Research Associate, Dept of Instrumentation, IISc Bangalore (Oct 2007 - May 2009).

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